1. P. Fazan, "Future RAM emerging memory technologies and their applications", invited paper presented at the GSA Memory Conference, Taiwan, March 2010.

2. P. Fazan, "Z-RAM® floating body memory for high density embedded and standalone RAM memories", CALIT Symposium, IMEC, February 2010.

3. P. Fazan, "Z-RAM® floating body memory: materials, devices and processes", SRC/NSF/A*star forum on 2020 memory strategies, Singapore, October 2009.

4. N.R. Mohapatra, R. vanBentum et al., "Effect of source/drain asymmetry on the performance of Z-RAM® devices", presented at the 2009 IEEE International SOI Conference, Foster City, October 2009.

5. P. Fazan, "Overview and future challenges of capacitor less DRAM technologies for high density memory applications", invited paper presented at the 2009 SSDM Conference, Sendai, October 2009, p.140.

6. Y. Liu, V. Koldyaev, "Surface generation-recombination process of gate and STI oxide interfaces responsible for junction leakage on SOI", presented at the 216th ECS meeting, Vienna, October 2009.

7. M. Gupta, S. Bhardwaj, J. Kwon, X. Zhang, V. Gopinath, "Spice modeling of self sustained operation (SSO) to program sub 90nm floating body cells", presented at the 2009 SISPAD, San Diego, September 2009.

8. S. Okhonin, "Z-RAM® (limits of DRAM)", Tutorial presented at the 2009 ESSDERC, Athens, September 2009.

9. T.S. Jang, J.S. Kim, S.M. Hwang et al., "Highly scalable Z-RAM® with remarkably long data retention for DRAM applications", proceedings of the 2009 VLSI Technology Symposium, June 2009, p.234.

10. P. Fazan, "Floating body memories for DRAM and eDRAM: a review", invited paper presented at the 2009 IMW, Monterey, May 2009.

11. A. Nayfeh, V. Koldyaev, "Experimental evidence of long-range point defect-Phosphorous pair diffusion in silicon", presented at the 2009 MRS Spring meeting, San Francisco, April 2009.

12. A. Singh et al., "A 2ns read latency 4Mb embedded floating body memory macro in 45nm SOI technology", presented at the 2009 ISSCC Conference, February 2009, p.460.

13. A. Nayfeh, V. Koldyaev, P. Beaud, M. Nagoga, S. Okhonin, "Leakage current model for SOI based floating body memory that includes the Poole Frenkel effect", presented at the 2008 IEEE International SOI Conference, Honolulu, October 2008, p.75.

14. S. Okhonin, M. Nagoga et al., "Ultra scaled Z-RAM® cell", presented at the 2008 IEEE International SOI Conference, Honolulu, October 2008, p.157.

15. S. Okhonin, M. Nagoga, E. Carman, R. Beffa, E. Faraoni, "New generation of Z-RAM®", proceedings of the 2007 IEDM, December 2007, p.925.

16. D. Fisch, A. Singh, G. Popov, "Z-RAM® ultra dense memory for 90 nm and below", Hot Chips Conference, 2006.

17. J. Mitchel, "How to cut die cost in half", Tutorial, presented at the 4th SoC Conference, Newport Beach, November 2006.

18. P. Fazan, "The various advantages of SOI technology", Tutorial, presented at the 4th SoC Conference, Newport Beach, November 2006.

19. P. Fazan, "1T Memory technology", Tutorial, presented at the 2006 IEEE International SOI Conference, Niagara Falls, October 2006.

20. M. Nagoga, S. Okhonin, C. Bassin, P. Fazan et al., "Retention characteristics of Z-RAM® cell based on FinFET and Tri gate devices", presented at the 2005 IEEE International SOI Conference, Honolulu, October 2005.

21. S. Okhonin, P. Fazan, M.E. Jones, "Zero capacitor embedded memory technology for SoC", invited paper, presented at the IEEE International workshop on memory technology design and testing, MTDT 2005 Conference, Taipei, August 2005.

22. P. Fazan, S. Okhonin, M. Nagoga, "DRAM cell trends", invited paper, presented at the International Conference on Memory technology and design, ICMTD 2005, Giens, May 2005.

23. P. Fazan, S. Okhonin, M. Nagoga, "SOI floating body memories for embedded memory applications", invited paper, presented at the SSDM Conference, Tokyo, September 2004.

24. P. Fazan, S. Okhonin, M. Nagoga, "A new block refresh concept for SOI floating body memories", presented at the 2003 IEEE International SOI Conference, Newport Beach, CA, October 1-2, 2003.

25. S. Okhonin, M. Nagoga, P. Fazan "New characterization techniques for SOI and related devices", invited paper presented at the 203rd meeting of the Electrochem. Society, 3rd Symposium on ULSI process integration, Paris, April 27- May 2, 2003.

26. P. Fazan, S. Okhonin, M. Nagoga, R. Ferrant, O. Rey, A. Borschberg, "Novel memory concepts on SOI", invited paper presented at the 203rd meeting of the Electrochem. Society, 11th Symposium on SOI technology and devices, Paris, April 27- May 2, 2003.

27. P. Fazan, S. Okhonin, M. Nagoga, J.M. Sallese, "Capacitor-less 1 Transistor DRAM", invited paper presented at the 2002 IEEE International SOI Conference, Williamsburg, October 2002.

28. S. Okhonin, M. Nagoga, J.M. Sallese, P. Fazan "A SOI Capacitor less 1T-DRAM", proceedings of the Silicon 2002 International Conference, Novosibirsk, July 2002, p. 163.

29. J. M. Sallese, S. Okhonin, P. Fazan, M. Nagoga, "Principles of the 1T DRAM concept on SOI", Proceedings of the 9th International Conference MIXDES, 75, 2002.

30. P. Fazan, S. Okhonin, M. Nagoga, J.M. Sallese, "A simple 1 transistor capacitor-less memory cell for high performance embedded DRAMs", presented at the IEEE CICC Conf., Orlando, May 2002.

31. P. Fazan, S. Okhonin, M. Nagoga, J.M. Sallese, "A highly manufacturable capacitor-less 1T-DRAM concept", invited paper presented at the SPIE Conference, Santa Clara, March 2002.

32. S. Okhonin, M. Nagoga, J.M. Sallese, P. Fazan, O. Faynot, J. Pontcharra, S. Cristoloveanu, H. van Meer, K. De Meyer, "Transient effects in PD SOI MOSFETs and potential DRAM applications", Solid State Electronics 46, 1709, 2002.

33. S. Okhonin, M. Nagoga, J.M. Sallese, P. Fazan, "A capacitor-less 1T-DRAM cell", IEEE Electron Device Letters, EDL 23, 85, 2002.

34. S. Okhonin, M. Nagoga, J.M. Sallese, P. Fazan, "A SOI capacitor-less 1T-DRAM concept", Proceedings of the IEEE International SOI Conference, 153, 2001.