To revolutionize the electronics industry by delivering the next generation of memory technologies.

Innovative Silicon, Inc. (ISi) is a fast-growing, venture-backed company that develops and licenses the Z-RAM® memory technology. Innovative Silicon has attracted over $50M in venture financing to date, has built a world-class team of technologists, and has been granted over 50 patents to date on the Z-RAM technology.  The company has also recently enhanced its Z-RAM technology to work on bulk silicon without requiring silicon-on-insulator (SOI) substrates.

The Z-RAM memory technology has received significant industry acclaim and has been licensed by Hynix Semiconductor for use in stand-alone DRAM ICs.  The reason is simple economics: the Z-RAM technology can produce memory devices that are pin-compatible with the latest DRAM parts but can be manufactured for 25% - 30% less than the parts they replace.  This makes Z-RAM by far the world's lowest-cost random-access memory technology and the leading contender for the next generation of DRAM devices.

The heart of the award winning Z-RAM technology is the memory bitcell.  Instead of using both a transistor and a capacitor to store the memory state of "1" or "0", the Z-RAM bitcell uses only a single transistor that leverages the "floating body" effect.  The Z-RAM cost advantage comes from eliminating the complex DRAM capacitor – which is a significant portion of the cost of any DRAM device, and is only getting more expensive and difficult to fabricate with each new manufacturing process generation.

This simple, elegant bitcell provides significant advantages in the highly competitive DRAM market:

• The world's lowest-cost memories because of the world's simplest bitcell – a Z-RAM device will be 25% - 30% lower-cost than a comparable DRAM device.
• Requires no new materials or tooling – the Z-RAM technology is compatible with existing fabs and process flows.
• Functionally compatible with DRAM technology – comparable in performance, power consumption, and virtually every other parameter.
• Significant manufacturing improvements - faster technology node introduction because of the simplified manufacturing flow, shorter manufacturing cycles times, less work in progress, and fewer "at-risk" wafers.